epitaxially

常見(jiàn)例句

• T he epitaxially lateral overgrowth of GaN on SiO 2 areas is realized and a plana r ELO GaN film is obtained.
  在SiO2 襯底上側(cè)向外延生長(zhǎng)GaN已經(jīng)實(shí)現(xiàn) ,并得到了平面的ELOGaN薄膜。
• The results show that the W/Mo multilayers h ave a epitaxially grown mode and got polycrystal superlattices.
  結(jié)果表明,W/Mo納米多層膜形成多晶外延生長(zhǎng)的超晶格結(jié)構(gòu);
• Vacuum sputter deposition techniques were developed to achieve high Hc , with high Ms materials epitaxially grown on Cr underlayers.
  使用真空濺射方法在Cr底層上沉積高矯頑力、高飽和磁化強(qiáng)度的磁記錄介質(zhì)。
• The single-crystalline Ni film with the body-centered-cubic(bcc) structure are obtained epitaxially on GaAs(001) surface at 170K.
  在170K的生長(zhǎng)溫度下，通過(guò)分子束外延在GaAs(001) 表面生長(zhǎng)得到體心立方結(jié)構(gòu)金屬Ni薄膜。
• However, this situation can be improved when depositing a thin pure silicon layer epitaxially on the top of the ribbon, so we got low cost but relatively high efficiency solar cells.
  然而如果在這種硅片表面沉積一層高純硅，然后再在上面做電池，則既保證了效率又大大降低了成本。
• Structural properties of epitaxially laterally overgrown (ELO) GaN on patterned GaN "substrates" by hydride vapor phase epitaxy (HVPE) have been investigated.
  研究了在刻有圖形的GaN“襯底”上用HVPE方法側(cè)向外延生長(zhǎng) (ELO)GaN的結(jié)構(gòu)特性。
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