InGaN

基本解釋

InGaN Films Grown by Metalorganic Chemical Vapor Deposition[J].
引用該論文江風(fēng)益;李述體;王立;彭學(xué)新;熊傳兵.
The goal of this thesis is to grow InGaN at different temperatures in the form of GaN/InGaN double-heterojunction nanorods.
中文摘要在本論文中主要以不同生長溫度的氮化銦鎵為研究目標(biāo)，所生長的結(jié)構(gòu)為氮化鎵/氮化銦鎵雙異質(zhì)結(jié)構(gòu)奈米柱。
In this research, the optical properties and material nano-structures of an undoped and a Si-doped InGaN thin films beyond the critical layer thickness are studied.
摘要:在本研究中，我們針對大于臨界厚度的無摻雜與矽摻雜的兩片氮化銦鎵薄膜樣品，有系統(tǒng)地探討了它們的光學(xué)與材料特性。
Observation on therapeutic efficacy of Jinhuang p ingan decoction on intestinal adhesion [J ].Integr Tradit Chin West Med Pract Crit Care Med, 1998, 5(10): 452-4.
"金黃平安湯"治療腸粘連的臨床療效觀察[J].;中西醫(yī)結(jié)合實用臨床急救;1998;5(10):452-4
By analyzing the flip chip structure of high power InGaN blue +YAG fluorescence powders white light emitting diode (LED), it shows that it can improve the luminous and heat dissipation efficacy.
通過對高功率InGaN(藍(lán))LED倒裝芯片結(jié)構(gòu)+YAG熒光粉構(gòu)成白光LED的分析,可以得出這種結(jié)構(gòu)能提高發(fā)光效率和散熱效果的結(jié)論。