MQW

基本解釋

It can be applied to an arbitary refractive index profile of the MQW waveguide.
該公式是偏振態(tài)和量子阱波導(dǎo)折射率分布的函數(shù)。
InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
采用 In Ga As/ Ga As作為多量子阱 SEED器件的有源區(qū) ;從而獲得了 980 nm工作波長 .
By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
從實(shí)驗(yàn)的數(shù)據(jù)得知，在室溫下，樣品的矽發(fā)光強(qiáng)度隨著注入電流的增加而有顯著的增強(qiáng)；
In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.
特別是在微腔多量子阱結(jié)構(gòu)中存在一個最佳阱數(shù)對應(yīng)著閾值電流密度的最小值。
Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD).
摘要以有機(jī)金屬化學(xué)氣象沉積在藍(lán)寶石基板上成長由單一氮化鎵成核層與氮化鎵/化硅雙緩沖層所形成的兩種不同氮基礎(chǔ)的多層量子井發(fā)光二極體結(jié)構(gòu)。