MQW

基本解釋

It can be applied to an arbitary refractive index profile of the MQW waveguide.
該公式是偏振態(tài)和量子阱波導折射率分布的函數(shù)。
InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
采用 In Ga As/ Ga As作為多量子阱 SEED器件的有源區(qū) ;從而獲得了 980 nm工作波長 .
By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
從實驗的數(shù)據(jù)得知，在室溫下，樣品的矽發(fā)光強度隨著注入電流的增加而有顯著的增強；
In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.
特別是在微腔多量子阱結構中存在一個最佳阱數(shù)對應著閾值電流密度的最小值。
Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD).
摘要以有機金屬化學氣象沉積在藍寶石基板上成長由單一氮化鎵成核層與氮化鎵/化硅雙緩沖層所形成的兩種不同氮基礎的多層量子井發(fā)光二極體結構。