TDDB
基本解釋
- 時間依賴介質擊穿
英漢例句
- And it should also be noted that the TDDB properties and lifetime of refractory metal gate capacitors with thinner EOT are better than those of polysilicon gate capacitors.
進一步研究發(fā)現(xiàn)具有更薄EOT的難熔金屬柵電極PMOS電容在TDDB特性以及壽命等方面均優(yōu)于多晶硅柵電極的相應結構. - TDDB evaluation experiments are implemented on the thin gate oxides MOS capacitor,and a method of precise measurement and characterization the trap density and accumulative failure are presented.
采用恒定電流應力對薄柵氧化層MOS電容進行了TDDB評價實驗,提出了精確測量和表征陷阱密度及累積失效率的方法。 - Another regularity between the J-V curves and oxidation pressures was found and we blamed the oxidation pressures for the major problem.Finally, TDDB measurements were made to support our supposition.
發(fā)現(xiàn)其電流曲線也有規(guī)律性存在，而我們歸咎其主因為氧化時的壓力，最后并作了TDDB的量測來驗證我們的假設。 - TDDB Test and Parameter Extraction of Gate Oxides
柵氧化層TDDB可靠性評價試驗及模型參數(shù)提取 - EM, HCI and TDDB Test Structure Design
測試結構設計