anodic bonding

基本解釋

The sol-gel technology formed a uniform sample coating used in anodic bonding.
因此本文認(rèn)為共陽極法是一種可靠的鍵合多層晶片的技術(shù)。
Under the assumption of only tow kinds of mobile alkali ions in glass, a model for the metal glass electric field assisted anodic bonding is proposed.
在假設(shè)玻璃中僅有兩種可動(dòng)堿金屬離子的情況下，提出了一個(gè)金屬玻璃電場輔助陽極連接模型。
Finally experiments of anodic bonding and Au-Si bonding have been carried out to find out the key factors related to the bonding strength, and the most feasible bonding manners are put forward.
最后，進(jìn)行了陽極鍵合、金-硅鍵合試驗(yàn)，研究了試驗(yàn)中影響鍵合強(qiáng)度的關(guān)鍵因素，提出了較為可行的鍵合工藝。

陽極鍵合
The glass thin film was suitable for anodic bonding as the intermediate layer. It is essential for realizing anodic bonding of metal to ceramic.
通過XRD，EDX和SEM等手段對薄膜的分析表明，化學(xué)組成成分上與玻璃靶材相比沒有變化，適合作為中間層為實(shí)現(xiàn)陶瓷與金屬的陽極鍵合連接提供必要的前提條件。
化學(xué)
陽極鍵合
But as one of the packaging technology, anodic bonding of silicon-glass has many deficiencies.
但作為微機(jī)電系統(tǒng)封裝的關(guān)鍵技術(shù)——半導(dǎo)體硅與玻璃的陽極鍵合技術(shù)，仍然存在著許多問題。
靜電鍵合
Anodic bonding technology of semiconductor silicon and glass wafer is key technology of MEMS.
半導(dǎo)體硅與玻璃的靜電鍵合技術(shù)是微電子機(jī)械系統(tǒng)(MEMS)的關(guān)鍵技術(shù)，而作為關(guān)鍵材料之一的靜電鍵合玻璃有著廣闊的工業(yè)應(yīng)用前景。
能源科學(xué)技術(shù)
陽極焊