band offset

基本解釋

帶偏
Finally, we discuss the electronic properties of BaTiO_3-ZnO heterostructure from its interfacial atomic structures. Band offset calculations show that electrons in ZnO atomic layers will be prevented from transmitting to BaTiO_3 side, providing possibilities for manufacturing ferroelectric-semiconductor heterostructure-based devices.
最后，從界面原子結(jié)構(gòu)出發(fā)深入討論了BaTiO_3-ZnO異質(zhì)結(jié)構(gòu)的電子特性，其中帶偏計(jì)算表明電子從ZnO一側(cè)難以越過(guò)界面勢(shì)壘到達(dá)BaTiO_3側(cè)，從而為研制基于鐵電-半導(dǎo)體異質(zhì)結(jié)構(gòu)的納米器件提供了可能。
物理學(xué)
能帶結(jié)構(gòu)
As for the theoretical analysis and calculation, we use both the classical analytical Anderson model and novel numerical C-V Matching method to analyze the band structure of the nc-Si:H/c-Si, and successfully obtain the band offset and interface charge density parameters.
理論分析和計(jì)算方面,文本重點(diǎn)介紹了利用電容—電壓譜測(cè)量PN結(jié)物理特性的經(jīng)典方法和新穎的C-V Matching數(shù)值回歸分析方法基本理論,并利用這兩種方法對(duì)nc-Si:H/c-Si異質(zhì)結(jié)二極管的電容—電壓譜和能帶結(jié)構(gòu)進(jìn)行了詳細(xì)的計(jì)算和分析,得到了明確的能帶斷裂參數(shù)和界面電荷密度的數(shù)值。
化學(xué)
帶能差距