collector base junction

基本解釋

In typical operation, the emitter–base junction is forward biased and the base–collector junction is reverse biased.
在正常工作中，發(fā)射結正向偏置，基集電結反向偏置。
At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction.
模擬表明，在恒定的偏置電流下，沿集電結方向移動量子阱能顯著提高光學帶寬。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area , base, collector area, the three areas form two PN junction.
無論NPN型還是PNP型管，三極管內部均有三個區(qū)、即發(fā)射區(qū)、基區(qū)、集電區(qū)，三個區(qū)形成兩個PN結。