dielectric breakdown model
英漢例句
- A physical model of dielectric breakdown was presented in IC silicon dioxide films.
提出了芯片門電路硅氧化層靜電放電介質(zhì)擊穿的物理模型。 - The breakdown and quench model has been proposed theoretically considering the wall charges accumulated on the dielectric layers.
考慮到電介質(zhì)表面積累的壁電荷的作用，理論上提出了擊穿—熄火方程。 - On the basis of the physical model of ESD dielectric oxide breakdown of IC devices, this paper discusses the mechanism of ESD oxide breakdown when a first order voltage is applied across and oxide.
在集成電路絕緣氧化層ESD介質(zhì)擊穿物理模型的基礎(chǔ)上，討論了絕緣氧化層加上一次線性電場條件下發(fā)生介質(zhì)擊穿的機理。