film oxide resistor
常見例句
- As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
其結(jié)果，用作電阻元件（354）的氧化物半導(dǎo)體層（905）的電阻值低于用作薄膜晶體管（355）的氧化物半導(dǎo)體層（906）的電阻值。
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