grain boundary

基本解釋

Based on above results a model of boundary migration was given and the effect of RE on the grain boundary migration, carbon atom diffusion and precipitation was discussed.
本文以此為依據(jù)設(shè)計(jì)了稀土滲入時(shí)的晶界遷移模型，并探討了稀土對(duì)晶界遷移及對(duì)碳原子擴(kuò)散與析出機(jī)制的影響。
The individual crystal units comprising the aggregate structure where the crystalline orientation does not change. The grain boundary is where these individual crystal units meet.
構(gòu)成總的結(jié)構(gòu)的單個(gè)的晶體個(gè)體，而晶體的方位并沒(méi)有發(fā)生變化。晶界是這些單個(gè)的晶體單位相遇的界限。
The results show that the microstructure of the cast iron without being RE modified is mostly coarse-grained austenite and network carbides at the grain boundary.
結(jié)果表明，未經(jīng)稀土變質(zhì)處理的鑄鐵組織大部分為粗晶粒奧氏體，還有分布于晶界的網(wǎng)狀碳化物；

晶界
Nonequilibrium eutectic led to small amount of Ni segregation at grain boundary andintracrystal during solidification process.
合金熔煉過(guò)程中發(fā)生離異共晶，使微量鎳在晶界和晶內(nèi)偏析。
化學(xué)
晶界
The results of Energy Spectra show that acceptors Sr are mainly segregated in the grain boundary, which greatly contribute to the form of varistor barrier.
能譜分析表明：受主雜質(zhì)主要偏析于晶界，這有利于形成具有良好壓敏電阻特性的晶界勢(shì)壘。
粒間邊界
晶粒邊界
晶粒界

晶粒邊界
The crystal grain boundary of V2O5 films was melted and disappeared as increasing the deposition temperature, and the crystalline V2O5 films can be obtained by deposition at >300℃.
而襯底溫度升高促進(jìn)薄膜晶體顆粒長(zhǎng)大、熔結(jié)，晶粒邊界消失，在較高襯底溫度(300～400℃)，得到連續(xù)的結(jié)晶性能良好的V_2O_5薄膜。
晶粒界
晶界

顆粒邊界
The MR of the film can be improved markedly, which can be explained by grain boundary theory.
低溫下顆粒小,顆粒間平均細(xì)縫增加,磁電阻增大,這可由顆粒邊界效應(yīng)解釋。
晶粒間界