heteroepitaxy

基本解釋

• n.異質(zhì)外延

同根派生

• heteroepitaxy相關(guān)詞

英漢例句

• Heteroepitaxy of InP on GaAs Substrates Using Metamorphic Buffers and Strained Layer Superlattice[J].
  引用該論文 Wang Qi;Ren Xiaomin;Huang Yongqing;Huang Hui;Cai Shiwei.
• At present there exist two kinds of manufacturing met hods for silicon-based lasers,i.e.,heteroepitaxy and bonding.
  目前制作硅基激光器的方法主要分為兩類，異質(zhì)結(jié)外延生長(zhǎng)和異質(zhì)材料鍵合。
• The themes of this thesis, heteroepitaxy and ion implantation, are two areas that have been very actively researched in the last two decades.
  當(dāng)元件尺度持續(xù)縮小至奈米尺度階段時(shí)，深入了解未來(lái)先進(jìn)奈米元件中金屬薄膜與半導(dǎo)體基材間之界面反應(yīng)是相當(dāng)重要的一項(xiàng)課題。
• This kind of technology provides an effective way to solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for improving device structure and characteristics.
  這種技術(shù)解決了外延生長(zhǎng)難以解決的晶格失配問(wèn)題，為改善器件結(jié)構(gòu)及性能提供了巨大的潛力。
• Advance of the GaAs/Si Heteroepitaxy
  GaAs/Si異質(zhì)外延的新進(jìn)展

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