high-electron-mobility

基本解釋

Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT).
在變緩沖層高遷移率晶體管（MM_HEMT）器件中，二維電子氣的輸運性質(zhì)對器件性能起著決定作用。
In this thesis, a detailed discussion of plasma wave instability in the high-electron-mobility transistor (HEMT) driven by the terahertz radiation is presented.
本學(xué)位論文主要圍繞高遷移率半導(dǎo)體在太赫茲輻射作用下，溝道內(nèi)等離子體波振蕩特性進行研究。
The subject of the invention is to raise the two-dimensional electron density and electron mobility of high electron mobility transistor of gallium nitride without generating short channelling effect.
其課題在于，針對氮化鎵系的高電子遷移率晶體管，提高二維電子濃度和電子遷移率，并且不產(chǎn)生短溝道效應(yīng)。