isochronal annealing

基本解釋

Two distinct stages in the isochronal annealing curve confirm that the defects formed in the direct transformation mainly consist of vacancies and dislocations.
在等時(shí)退火曲線上形成兩個(gè)明顯的臺(tái)階，是由于空位和位錯(cuò)恢復(fù)引起的。
The activation energy distribution during 25,100 ℃ isothermal annealing and 25-250 ℃ isochronal annealing for post-irradiation CMOS devices were calculated by annealing model.
根據(jù)退火模型計(jì)算了CMOS器件輻照后25、100℃等溫和25~250℃等時(shí)退火過(guò)程中激發(fā)能的分布。