nanocrystalline silicon films

基本解釋

B and P doped hydrogenated nanocrystalline silicon films (nc Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD).
采用等離子增強化學氣相沉積（PECVD）方法成功的沉積出摻雜（主要是磷、硼）納米硅薄膜。
In argon (Ar) gas, nanocrystalline silicon films are prepared by pulsed laser ablation. The influence of ambient pressure on surface morphology of nanocrystalline silicon film is studied.
采用脈沖激光燒蝕技術(shù)在氬氣環(huán)境下制備了納米硅薄膜，研究了環(huán)境氣體壓強對納米硅薄膜表面形貌的影響。
Nanocrystalline silicon films have special structure and many excellent optoelectronic properties, and are supposed to be applied in optoelectronic devices and large scale integrated circuits.
納米硅薄膜具有獨特的結(jié)構(gòu)和許多優(yōu)異的光電性能，可望應(yīng)用于新型光電器件、大規(guī)模集成電路等領(lǐng)域。