recombination velocity

基本解釋

The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.
確定了低溫下非平衡載流子復(fù)合率及擴(kuò)散速度的降低，是導(dǎo)致SRAM斷電后數(shù)據(jù)殘留的主要原因。
An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我們又進(jìn)一步研究了退火對少數(shù)載流子壽命和表面復(fù)合速率的影響，因為其對太陽能電池的最終效率影響很大。
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Using these results, we discuss minority carrier lifetime and surface recombination velocity of some wafers.
可以使用這些結(jié)果討論一些薄片的少子壽命和表面復(fù)合速度。