rubrene

常見(jiàn)例句

When the concentration of rubrene is 0.5% ,device CIE is (0.31,0.34),very near the equal energy point of white light.
器件在摻雜濃度為0.;5%25時(shí);色坐標(biāo)為(0
Device D: ITO/NPB(45 nm)/NPB:rubrene(5 nm, 1 wt% against NPB)/rubrene/Alq3(10 nm)/rubrene /Alq3(10 nm)/BCP(9 nm)/Alq3(30 nm)/LiF/Al.
器件D: ITO/NPB(50 nm)/Alq3 : DPVBi : DCJTB(10 nm)/Alq3(40 nm)/LiF(1 nm)/Al(200 nm)。
The structure of the devices are ITO／NPB／TPBi：Rubrene／Alq／Mg：Ag and ITO／NPB／DPVBi：Perylene／Alq：DCJTB／Mg：Ag.
另一種為藍(lán)色染料和紅色染料分別加在發(fā)光層與電子傳輸層中的普通3層結(jié)構(gòu)器件。
The mechanism of incomplete energy transfer and directly carriers capture by rubrene was existed in this WOLED simultaneously.
本文對(duì)rubrene單摻雜層的有機(jī)白光器件的性能和發(fā)光機(jī)理進(jìn)行了研究。
As a result, it’s a crucial issue to get the comprehensive knowledge about the charge transport properties of rubrene thin films.
因此，對(duì)紅熒烯薄膜的電荷輸運(yùn)性質(zhì)有全面的認(rèn)識(shí)是關(guān)鍵所在。
A fairly pure white OLED with CIE coordinates of (0.33, 0.34) at 4 000 cd/m~2 is realized when the thickness of TBVB is 10 nm and that of rubrene is 0.15 nm.
當(dāng)TBVB和Rubrene的厚度分別為10;0.;15nm時(shí);器件在亮度為4000cd/m2時(shí)發(fā)光色坐標(biāo)為(0