schottky barrier diode

基本解釋

Series resistance is an important factor confining the response speed of Schottky barrier diode.
串連電阻是制約肖特基二極管響應(yīng)速度的一個(gè)關(guān)鍵因素。
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss.
同步整流技術(shù)采用低導(dǎo)通電阻的MOS管代替導(dǎo)通壓降相對(duì)較大的快恢復(fù)二極管或肖特基二極管，大大減小了輸出整流損耗，效率相對(duì)提高。
It has been proved that the value of the voltage drop can be achieved through the extrapolation of the forward current voltage curve when the current through the Schottky barrier diode reach 40A.
通過外推40A大電流下芯片結(jié)壓降的數(shù)值，驗(yàn)證了通過小電流正向電流電壓特性曲線來外推預(yù)測(cè)大電流下芯片結(jié)壓降值的可行性。

肖特基二極管
The characteristics at the metal/Si interface are similar to that of Schottky barrier diode. Thermionic emission and quantum tunneling are the main current conduction mechanism.
源漏區(qū)肖特基接觸界面的特性和常規(guī)肖特基二極管相似，電流的輸運(yùn)主要以熱電子發(fā)射和隧道效應(yīng)為主。
肖特基勢(shì)壘二極管
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基勢(shì)壘二極管是利用金屬半導(dǎo)體的整流接觸特性而制成的二極管。
能源科學(xué)技術(shù)
肖特基二極管