silicon substrate loss

基本解釋

Using thick porous silicon layers can reduce the high frequency loss in Si substrate.
采用多孔硅厚膜作為隔離層，能夠極大地降低襯底高頻損耗。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
這些Q值受到導(dǎo)體電阻和硅襯底的渦流損耗的限制。
In order to reduce substrate loss and improve inductors' Q factor (Quality Factor), a novel insulation method, forming thick OPS layer on the low resistivity silicon (LRS) substrate, is proposed.
提出了一種在低阻硅襯底上形成氧化多孔硅厚膜來(lái)隔離硅襯底損耗的硅基平面電感結(jié)構(gòu)；