It was simultaneously observed by RHESSI at hard X-ray wavelengths, by TRACE at EUV wavelengths and by SOHO/MDI . 幾乎在同一時(shí)刻;RHESSI在硬X射線波段、TRACE在極紫外波段、SOHO/MDI也觀測(cè)到這一爆發(fā)事件.
Some key technologies on soft X-ray and Extreme Ultraviolet(EUV) optics developed at CIOMP are reviewed in this paper. 綜述了我所軟X射線-極紫外波段關(guān)鍵技術(shù)的研究進(jìn)展。
An imaging system based on MCP (MicroChannel plate) detector is designed to image the extreme ultraviolet (EUV) light at 30.4 nm. 本文基于微通道板MCP(Microchannel Plate)探測(cè)器件設(shè)計(jì)一套成像系統(tǒng);用于對(duì)波長(zhǎng)為30.;4 nm的極紫外EUV(Extreme Ultraviolet)光進(jìn)行成像
Some progress on top-down nano-fabrication, such as electron beam lithography,X-ray lithography and EUV lithography were introduced. 介紹了電子束曝光技術(shù)、EUV光刻技術(shù)和X射線光刻技術(shù)的進(jìn)展;
For its part, Intel remains confident that EUV will be needed once the spacing between transistors reaches less than 50 nanometers. 但英特爾方面卻依然信心十足，認(rèn)為當(dāng)電晶體的間距小于50奈米時(shí)，就會(huì)需要EUV。
Broadband Mo/Si multilayer polarization optical elements were developed for the extreme ultraviolet(EUV) region,including a reflective analyzer and a transmission phase retarder. 研究了極紫外寬帶多層膜偏振光學(xué)元件,包括反射式檢偏器與透射式相移片。