valence band

基本解釋

This paper gives a simplified calculation of the valence band structure for a diamond-type crystal in nearest neighbor approximation.
用最近鄰近似法對金剛石型晶體的價帶給出了一種簡化的計算法。
The valence-band offsets of such systems are calculated by frozen potential method and their Joint density of states has been computed by tetrahedron method.
在此基礎(chǔ)上，用凍結(jié)勢方法計算了該超晶格系統(tǒng)的價帶帶階；用四面體方法計算了該系統(tǒng)的聯(lián)合態(tài)密度。
A theoretical method for determining the valence-band offset (VBO) at strained alloy type heterojunctions is presented by combining the cluster expansion method and average-bond-energy method.
把原子集團(tuán)展開方法同平均鍵能方法相結(jié)合，建立了一種研究合金型應(yīng)變層異質(zhì)界面價帶偏移的方法。

價帶
When sub-picosecond ultra-short laser pulses irradiated on materials, electrons can be excitated from valence band to conductive band by the incident laser pulse, and the electron density can reach vary high level （10211022/cm3）.
而在第六章中,基于對前一章內(nèi)容的總結(jié),并在深入查閱大量相關(guān)文獻(xiàn)的基礎(chǔ)上,對各類半導(dǎo)體材料的激光損傷機(jī)制及其過程等有了更深一步的認(rèn)識:當(dāng)亞皮秒超短脈沖激光與材料相互作用時,入射激光可以將材料價帶中的電子激發(fā)到導(dǎo)帶上去,并可以使激發(fā)出的電子具有非常高的密度（10211022/cm3）和溫度（>=1000K）。
共價帶