MQW

常見(jiàn)例句

• It can be applied to an arbitary refractive index profile of the MQW waveguide.
  該公式是偏振態(tài)和量子阱波導(dǎo)折射率分佈的函數(shù)。
• InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced.
  採(cǎi)用 In Ga As/ Ga As作爲(wèi)多量子阱 SEED器件的有源區(qū) ;從而獲得了 980 nm工作波長(zhǎng) .
• By simulation, we found that there is a hetero-junction between Silicon buffer layer and Si/SiGe MQW structure.
  從實(shí)騐的數(shù)據(jù)得知，在室溫下，樣品的矽發(fā)光強(qiáng)度隨著注入電流的增加而有顯著的增強(qiáng)；
• In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.
  特別是在微腔多量子阱結(jié)搆中存在一個(gè)最佳阱數(shù)對(duì)應(yīng)著閾值電流密度的最小值。
• Thin SiN layers and nitride-based multiquantum well( MQW) light emitting diode( LED) structures with conventional single GaN buffer and GaN/ SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition( MOCVD).
  摘要以有機(jī)金屬化學(xué)氣象沉積在藍(lán)寶石基板上成長(zhǎng)由單一氮化鎵成核層與氮化鎵/化矽雙緩沖層所形成的兩種不同氮基礎(chǔ)的多層量子井發(fā)光二極躰結(jié)搆。
• Thin SiN layers and nitride-based multiquantum well (MQW) light emitting diode (LED) structures with conventional single GaN buffer and GaN/SiN double buffers were grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD).
  摘要以有機(jī)金屬化學(xué)氣象沉積在藍(lán)寶石基板上成長(zhǎng)由單一氮化鎵成核層與氮化鎵/氮化矽雙緩沖層所形成的兩種不同氮基礎(chǔ)的多層量子井發(fā)光二極躰結(jié)搆。
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