SiGeC

常見(jiàn)例句

• We have grown SiGeC alloy with C incorporated substitutionally by RTP/VLP CVD with noh equilibrium growth technique. We used ethylene as source of carbon.
  以 C2 H4 爲(wèi) C源、採(cǎi)用快速加熱超低壓化學(xué)氣相澱積 (RTP/VL P- CVD)的非平衡生長(zhǎng)技術(shù) ,在 Si(10 0 )襯底上生長(zhǎng)出具有一定代位式 C含量的矽基 Si Ge C郃金。
• Infrared (IR) photo-detectors;Strain Si;SiGeC;SiGe;Image sensors;KOH;Nonisotropic;RTCVD
  關(guān)鍵詞:紅外線光感測(cè)器;應(yīng)變矽;矽鍺碳;矽鍺;影像偵測(cè)器;KOH;非等曏性;RTCVD
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