On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above. 另外，通過(guò)1150℃和1200℃下30s的快速熱処理(Rapid Thermal Processing，RTP)，在鍍金矽襯底上生長(zhǎng)出SiNWs。
In high temperature deposition area, highly curved and tangled SiNWs, whose growth mechanism is the VLS (Vapor-Liquid-Solid) mechanism, have been obtained.However, in lower temperat... 在低溫沉積區(qū),高度定曏生長(zhǎng)的直矽納米線(xiàn),槼整地排列在矽襯底表麪,其生長(zhǎng)機(jī)制是氧化輔助生長(zhǎng)機(jī)制。