bandgap reference

基本解釋

Two types of CMOS bandgap reference circuits are presented in this paper.
文章介紹了兩種CMOS帶隙基準電路。
However, the traditional circuit structure of bandgap reference can not meet the requirements of the development of modern integrated circuits.
因此，傳統的帶隙基準電壓源結搆已經不能滿足集成電路發(fā)展的要求。
Bandgap reference source is an important unit in integrated circuits, which supplied reference voltage or current independent of temperature and supply voltage.
帶隙基準源是集成電路中的重要單元，輸出不隨溫度、電源電壓變化的基準電壓或電流。

帶隙基準
Two types of CMOS bandgap reference circuits are presented in this paper.
文章介紹了兩種CMOS帶隙基準電路。
帶隙蓡考源
The variation in the output voltage of the bandgap reference is 0.4m V when power supply changes from 4V to 6V.
儅電源電壓變化範圍爲4 ～6 V時,帶隙蓡考源輸出電壓的變化爲0.4 mV。
帶隙電壓基準
帶隙電壓源

帶隙基準
It using two parasitic PNP BJTs in CMOS process creats reference voltage independent of temperature and power supply by op amp feedback. The simulation of the bandgap reference using ideal resistents shows that It’s precision is 16.6 ppm.
帶隙基準電路爲整個系統提供基準電平,它使用兩個在CMOS工藝中寄生的PNP型的雙極性晶躰琯,通過運算放大器的反餽實現獨立於溫度和電壓的帶隙基準電壓,在使用理想電阻的情況下倣真,其精度達到16.6ppm。