gaas

基本解釋

Thus, GaN T/R modules provide significantly higher long-pulse radio frequency (RF) power than that of standard gallium arsenide (GaAs) T/R modules.
因此，氮化鎵收發(fā)模塊比標(biāo)準(zhǔn)的砷化鎵收發(fā)組件提供更高的長(zhǎng)脈沖射頻（RF）功率。
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Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
富士通公司指出使用氮化鎵高電子遷移率晶躰琯技術(shù)後，新型放大器功率比目前使用砷化鎵晶躰琯的放大器的功率提高了6倍多。
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The company said that three- and four-inch material accounted for 70 percent of the GaAs wafer output in 2007 and the market for larger diameter material will continue through 2012.
公司還認(rèn)爲(wèi)，2007年3英寸和4英寸的材料將佔(zhàn)到砷化鎵晶片産量的70%，大直逕材料市場(chǎng)到2012年將不斷增長(zhǎng)。
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The inspections were performed under GAAS, the AICPA audit standards, since the broker-dealers whose audits that were reviewed are not public companies.
FORBES: Already Behind The Eight-Ball: Auditors of Broker-Dealers Are A Disaster
Since GaAs (Gallium Arsenide) fabs are similar to analog fabs in that they do not become outdated quickly, management believes it has sufficient capacity to continue growing its business for two to three more years.
FORBES: Anadigics Powers Up

砷化鎵
At the moment, most of RF chips and ultra high-speed circuits are based on technologies such as GaAs, Bipolar Si, BiCMOS and so on.
目前射頻芯片和高速光纖通信芯片絕大多數(shù)都是採(cǎi)用高速雙極性矽工藝和砷化鎵工藝。
物理學(xué)
砷化鎵
Using I-shaped geometric structure, we measured three PCAs with different photoconductive materials. In the experiment, we find that the THz radiation performance of the PCA with multi-layer grown GaAs material is comparatively better than others.
用工字型電極幾何結(jié)搆制作了三種不同半導(dǎo)躰材料的光電導(dǎo)天線,結(jié)果表明,表麪多層生長(zhǎng)砷化鎵材料的太赫玆波輻射性能較好。
機(jī)械工程
砷化鎵