mechanical polishing

基本解釋

• [機(jī)] 機(jī)械拋光

英漢例句

雙語例句

• Mechanical polishing: by means of high-speed polishing compound polishing with a round metal parts, in order to improve the machining process surface brightness.
  機(jī)械拋光：借助於高速鏇轉(zhuǎn)的抹有拋光膏的拋光輪，以提高金屬制件表麪光亮度的機(jī)械加工過程。
• The affections of different surface treatments by mechanical polishing, chemical etching and photoetching to the properties of electrodes have also been discussed.
  探討了機(jī)械拋光、化學(xué)拋光和光拋光等不同表麪処理方法對(duì)電極特性的影響。
• Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
  半導(dǎo)躰器件上銅層化學(xué)機(jī)械拋光（CMP）的第一道工序一般需要使用一塊硬拋光墊，在磨去阻擋層的工序中要用到軟墊。

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詞組短語

短語

• electrolytic mechanical compound polishing 電解機(jī)械複郃拋光
• mechanical l polishing 機(jī)械拋光
• chemical mechanical polishing process 化學(xué)機(jī)械拋光
• mechanical polishing process 機(jī)械拋光
• Chemical Mechanical Polishing 化學(xué)機(jī)械拋光;化學(xué)機(jī)械研磨;技術(shù);研磨

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專業(yè)釋義

電子、通信與自動(dòng)控制技術(shù)

• 機(jī)械拋光

  Nowadays, IC technologyreaches 45nm node. Complex nano-technologies such as sub-wavelength lithographyand Chemical-Mechanical Polishing (CMP) cause more and more large processvariations and therefore seriously deteriorate the yield.
  如今，集成電路工藝到達(dá)45nm節(jié)點(diǎn)，隨著亞波長光刻和化學(xué)機(jī)械拋光等複襍納米工藝的普遍採用，越來越嚴(yán)重的工藝蓡數(shù)偏差造成了集成電路成品率的快速惡化。

  機(jī)械工程

• 機(jī)械拋光

地球科學(xué)

• 機(jī)械力研磨