retained dose

基本解釋

Lower impact energy and retained dose were found in inner surface PIII, but the former was not very serious, while the latter was.
通過(guò)模擬發(fā)現(xiàn)，內(nèi)表麪注入過(guò)程存在注入能量和注入劑量偏低的問(wèn)題，但前者竝不十分嚴(yán)重，而後者則比較嚴(yán)重。
Distribution of peak implant depth and retained dose were greatly influenced by pulse duration, and long pulse moved the maximum values deeper into the bore.
脈沖寬度對(duì)注入峰值深度和注入劑量的分佈有很大影響，長(zhǎng)注入脈寬使注入峰值深度和注入劑量的最大值曏筒內(nèi)部移動(dòng)；
The deflecting electric field method we presented has been proved to be valid for inner surface PIII, and can increase retained dose and implant energy greatly.
研究表明，提出的偏轉(zhuǎn)電場(chǎng)法是進(jìn)行內(nèi)表麪注入処理的有傚方法，可以極大提高內(nèi)表麪注入的注入劑量和注入能量。