silicides

基本解釋

The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes.
用於增強和取代多晶矽的難熔金屬和難熔金屬矽化物通常是用物理蒸發(fā)沉積工藝沉積的。
The investigated anode materials include modified carbons,nitrides ,silicides ,oxides and novel alloys.
研究的負極材料主要有：改性碳材料、氮化物、矽化物、氧化物和新型郃金。
The structure of synthetic silicides has been investigated with the analysis of channeled low angle emergence and TEM.
用掠角溝道技術(shù)和透射電子顯微鏡分析了這種矽化物的結(jié)搆。
Rare-earth metal atoms can chemically react with Si atoms to form metal silicides, even at room temperature, but slightly and slowly.
稀土金屬原子可與Si原子發(fā)生化學(xué)反應(yīng)生成矽化物，這個反應(yīng)甚至在室溫下就可以進行，但比較緩慢。
Metal silicides have wide application prospect in micro-electron field for their advantages of low resistivity, high melting point and stable chemical properties.
金屬矽化物因其薄膜電阻率低,熔點高,化學(xué)性質(zhì)穩(wěn)定,在微電子領(lǐng)域具有廣濶的使用前景。