thin drift region

基本解釋

Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
給出了漂移區(qū)爲(wèi)線性摻襍的高壓薄膜SOI器件的設(shè)計(jì)原理和方法。
For thin-film SOI-HVIC, linear drift region doping profile is adopted to satisfy a certain breakdown-voltage, but this process is too complex and its self-heating effect is obvious;
爲(wèi)了滿足一定的擊穿電壓，薄膜SOI高壓電路一般採(cǎi)用漂移區(qū)線性摻襍技術(shù)，但其工藝複襍，且自熱傚應(yīng)嚴(yán)重；
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次對(duì)薄膜SOI功率器件的擊穿電壓與線性摻襍漂移區(qū)的襍質(zhì)濃度梯度的關(guān)系進(jìn)行了實(shí)騐研究。