threshold current density

基本解釋

Double heterostructure(DH)realizes the complete confinement of carriers and light, decreasing threshold current density substantially.
雙異質結構實現(xiàn)了光和載流子的完全限制，使閾值電流密度大幅度下降。
Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.
通過數(shù)值計算分析，詳細研究了結構參數(shù)對遠場及閾值電流密度等的影響。
Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.
進一步分析認為，這是因為條寬變窄導致器件閾值電流密度、閾值載流子密度變大造成的。

閾值電流密度
This device is lasered under room-temperature pulse condition with threshold current density of 7.6 kA/cm2.
該器件在室溫脈沖下激射，閾值電流密度為7.6kA／cm2。
閾電流密度
閾電淋度
臨界電流密度