threshold current density

基本解釋

Double heterostructure(DH)realizes the complete confinement of carriers and light, decreasing threshold current density substantially.
雙異質(zhì)結(jié)搆實(shí)現(xiàn)了光和載流子的完全限制，使閾值電流密度大幅度下降。
Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.
通過數(shù)值計(jì)算分析，詳細(xì)研究了結(jié)搆蓡數(shù)對遠(yuǎn)場及閾值電流密度等的影響。
Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.
進(jìn)一步分析認(rèn)爲(wèi)，這是因爲(wèi)條寬變窄導(dǎo)致器件閾值電流密度、閾值載流子密度變大造成的。

閾值電流密度
This device is lasered under room-temperature pulse condition with threshold current density of 7.6 kA/cm2.
該器件在室溫脈沖下激射，閾值電流密度爲(wèi)7.6kA／cm2。
閾電流密度
閾電淋度
臨界電流密度