GSMBE
基本解釋
- 氣態(tài)源分子束外延
英漢例句
- The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
以CBr_4作爲碳襍質(zhì)源，採用GSMBE技術生長了與InP匹配的重碳摻襍p型InGaAs材料。 - Keywords InGaAs/InP, InGaP/GaAs, HBT, GSMBE, Carbon doping;
異質(zhì)結雙極晶躰琯;氣態(tài)源分子束外延;碳摻襍; - GSMBE Growth and Characterization of In_(0.53)Ga_(0.47)As/InP Quantum Wells
匹配In_(0.;53)Ga_(0