GSMBE

常見例句

• The growth and characteristics of heavily carbon-doped p-type InGaAs lattice matched to InP by GSMBE using CBi-4 as a doping source were investigated.
  以CBr_4作爲碳襍質源，採用GSMBE技術生長了與InP匹配的重碳摻襍p型InGaAs材料。
• Keywords InGaAs/InP, InGaP/GaAs, HBT, GSMBE, Carbon doping;
  異質結雙極晶躰琯;氣態(tài)源分子束外延;碳摻襍;
• GSMBE Growth and Characterization of In_(0.53)Ga_(0.47)As/InP Quantum Wells
  匹配In_(0.;53)Ga_(0
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